21 Nov Ivan Caño Prades has participated in the International Photovoltaic Science and Engineering Conference PVSEC-33 with an oral presentation titled “Emerging 1D SbSeI and SbSeBr micro- columnar absorbers for photovoltaic applications”
During the edition of the PVSEC conference held in Novembre 2022, Ivan Caño presented results related to the SENSATE project.
The International Photovoltaic Science and Engineering Conference (PVSEC) was established in 1984 to assemble experts from the materials science and energy engineering fields to present and discuss problems concerning solar power generation. Specifically, the basic properties of the photovoltaic effect, solar cell materials and processes, solar cell modules, and systems, as well as strategies for popularizing solar power generation. The aim of the conference has been to contribute to developing scholarship in relevant fields (from fundamental understanding to application) and enriching society. For the 33 rd edition, the following subjects (technical areas) have been addressed, encompassing the characteristic themes of “extension” and “integration”:
1. Policy, market, deployment, energy management, and related technologies
2. Advanced applications and core technologies for massive installation
3. Photovoltaic modules, solar cells, advanced materials, sophisticated processes, cell and
4. Perovskite and emerging photovoltaics, advanced materials, sophisticated processes
Ivan’s presentation described a novel methodology to synthesize SbSeI and SbSeBr by physical vapordeposition (PVD), which has been developed by the SENSATE team. In particular, it showed that SbSeI and SbSeBr samples have beem successfully synthesized at different annealing conditions, resulting in tunable single-crystal micro-columnar structures. In addition, the formation mechanism was studied, pointing towards new synthesis routes and a broader understanding of the material. Characterization results by SEM, HR-TEM, XRD and Raman spectroscopy were presented. In addition, prototype solar cell results were shown, demonstrating bandgap in the range of 1.7 – 2.0 eV, and V oc around 600 mV (among the highest reported for chalcohalide-based devices).
The presentation emphasized the potential of SbSeI and SbSeBr as photoabsorbers, pointing the way to develop new defect-tolerant and ferroelectric materials with anisotropic electrical properties for the next generation PV, in line with the SENSATE project goals and principles.